| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
91 pcs
|
91 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Style |
The 2N2946A is a silicon PNP bipolar junction transistor (BJT) manufactured by Texas Instruments. This transistor is designed for low-power applications and is housed in a TO-46 package.
Key electrical specifications include a collector-emitter breakdown voltage of 35V and a collector-base breakdown voltage of 40V. The maximum continuous collector current is rated at 100mA, with a total power dissipation of 400mW. The minimum current gain (hFE) is 50, and it has a minimum transition frequency (fT) of 5MHz at 1.0mA collector current and 6.0V collector-emitter voltage.
The transistor operates within a maximum temperature of 200°C. It is mounted via through-hole method. The datasheet also specifies output capacitance (Cobo) of a maximum of 10pF under specific test conditions.
This component is suitable for various general-purpose amplification and switching applications where its specific voltage and current ratings are beneficial.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the 2N2946A is 100mA.
The maximum operating temperature for the 2N2946A is 200°C.
The minimum current gain (hFE) for the 2N2946A is 50.
The 2N2946A transistor comes in a TO-46 package.
The 2N2946A transistor is mounted using the through-hole method.