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28 pcs
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28 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N2920 from Motorola Semiconductor is a silicon dual NPN transistor manufactured using the epitaxial planar process. It utilizes two individual chips housed in a hermetically sealed metal TO-78-6 case, making it suitable for differential amplifier applications.
Key electrical specifications include a collector-emitter voltage (VCEO) of 60V and a continuous collector current (IC) of up to 30mA per transistor. The device offers a wide operating and storage junction temperature range from -65°C to +200°C. The datasheet provides detailed electrical characteristics, including DC current gain (hFE) ranging from 150 to 600 at specific test conditions, and a transition frequency (fT) of 60MHz.
This dual transistor is designed for through-hole mounting. Its robust construction and specified performance parameters make it a reliable choice for various electronic circuits requiring matched transistor performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 2N2920 is packaged in a TO-78-6 case.
The maximum collector-base voltage is 60V.
The maximum continuous collector current is 30mA.
It operates within a temperature range of -65°C to +200°C.
RoHS compliance status is unverified.