LM431ACZXA
On Semiconductor
The LM431ACZXA from On Semiconductor is an adjustable shunt voltage reference. It offers a wide output voltage range and is suitable for various power management applications.
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22 pcs
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22 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N2920 from SP is a dual silicon NPN transistor manufactured using the epitaxial planar process. It features two individual chips housed in a hermetically sealed metal case, making it suitable for differential amplifier applications.
Key electrical specifications include a collector-emitter voltage of 60V and a continuous collector current of 30mA per transistor. The device operates over a wide temperature range from -65°C to +200°C. Power dissipation is rated at 300mW per die at 25°C ambient, or 500mW for both dice. When operated at a case temperature of 25°C, power dissipation increases to 750mW per die and 1.5W for both dice.
The transistor is housed in a TO-78-6 package with through-hole mounting. Electrical characteristics include a high DC current gain (hFE) ranging from 150 to 600 at 10μA and a transition frequency (fT) of 60MHz at 500μA. Matching characteristics for the dual transistors are also provided, including hFE ratio and base-emitter voltage differential.
This component is designed for applications requiring matched dual transistors, such as differential amplifiers and other sensitive analog circuits where precise performance and stability are critical.
| Qty | Low | High |
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| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (BVCEO) for the 2N2920 is 60V.
The maximum continuous collector current (IC) for the 2N2920 is 30mA.
The operating and storage junction temperature range for the 2N2920 is -65°C to +200°C.
The 2N2920 is supplied in a TO-78-6 package.
The DC Current Gain (hFE) of the 2N2920 ranges from 150 to 600 at VCE=5.0V and IC=10μA.
The transition frequency (fT) of the 2N2920 is a minimum of 60MHz at VCE=5.0V, IC=500μA, and f=20MHz.
