| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Automotive Grade | |
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| Tape & Reel |
The 2N2920 from STMicroelectronics is a silicon dual NPN transistor manufactured using the epitaxial planar process. It utilizes two individual chips housed in a hermetically sealed metal TO-78-6 case, making it suitable for differential amplifier applications.
Key electrical specifications include a collector-emitter voltage of 60V and a continuous collector current of 30mA. The device offers a wide operating and storage junction temperature range from -65°C to +200°C. The power dissipation is rated at 500mW for both dice at 25°C ambient, and up to 1.5W when measured at case temperature.
Electrical characteristics per transistor include a collector cutoff current (ICBO) of 2.0 nA at 45V, and a collector-emitter saturation voltage (VCE(SAT)) of 0.35V at 1.0mA collector current and 100μA base current. The DC current gain (hFE) ranges from 150 to 600 at 10μA collector current. The transition frequency (fT) is a minimum of 60MHz at 500μA collector current and 20MHz.
This transistor is packaged in a TO-78-6 metal can with a through-hole mounting type. Its dual-chip design and hermetic sealing make it a robust choice for demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.06 | $0.06 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage for the 2N2920 is 60V.
The continuous collector current rating for the 2N2920 is 30mA.
The operating and storage junction temperature range for the 2N2920 is -65°C to +200°C.
The 2N2920 is supplied in a TO-78-6 package.
The DC Current Gain (hFE) of the 2N2920 at 10μA collector current is a minimum of 150.
