| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N2920 is a dual NPN bipolar junction transistor array manufactured by Microchip Technology. It is designed for general-purpose switching and amplification applications requiring two matched NPN transistors in a single package. The device is rated for a collector-emitter voltage (VCEO) of 60V and a continuous collector current (IC) of 30mA. It offers a minimum DC current gain (hFE) of 300 at a test condition of Ic=1mA and Vce=5V, ensuring consistent performance in low-current applications. The collector-emitter saturation voltage is typically 300mV at Ib=100µA and Ic=1mA. Power dissipation is rated at 350mW, and the junction temperature can reach up to 200°C. The transistors are housed in a TO-78-6 metal can package with through-hole mounting, providing robust mechanical and thermal performance. This component is suitable for use in signal processing, driver stages, and other circuits where dual NPN transistors are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $38.09 | $38.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
TO-78-6 metal can.
Maximum junction temperature is 200°C.
RoHS3 compliant (unverified).
60V.
30mA.
300 at Ic=1mA, Vce=5V.
350mW.