| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,878 pcs
|
9878 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N2917 is a dual NPN silicon bipolar transistor array manufactured by Solid State Devices Inc (SSDI). It contains two NPN transistors in a single TO-78-6 metal can package, suitable for circuits requiring matched transistor pairs.
The electrical characteristics include a maximum power dissipation of 500mW, a collector-emitter breakdown voltage (Vceo) of 45V, and a minimum DC current gain (hFE) of 150 at a collector current of 1mA and Vce of 5V. The maximum collector-emitter saturation voltage is 350mV at a base current of 100µA and collector current of 1mA. Collector cutoff current is typically 2nA.
The device is housed in a TO-78-6 metal can package with through-hole mounting, providing mechanical robustness and ease of integration into circuit boards. The supplier device package is TO-78. The dual transistor configuration allows for matched performance in analog circuits, current mirrors, and differential amplifiers.
45V
500mW
TO-78-6 Metal Can
Yes, RoHS3 Compliant (unverified)
Minimum 150 at 1mA, 5V
Through Hole
Maximum 350mV at 100µA base, 1mA collector