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7,000 pcs
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7000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N2914 is a dual NPN silicon transistor designed for low-noise amplification and switching applications. It is housed in a TO-78 metal can package (also referenced as TO-77-8) and features through-hole mounting.
Key electrical specifications include a maximum collector-emitter voltage (Vceo) of 45V, maximum collector current (Ic) of 30mA, and a total power dissipation of 600mW at 25°C ambient. The DC current gain (hFE) ranges from 150 to 600 at Ic=0.01mA and Vce=5V. Typical collector-emitter saturation voltage is 0.35V at Ic=1.0mA. The transition frequency (fT) is typically 60MHz.
This transistor is suitable for low-level signal amplification, differential amplifier stages, and other circuits requiring matched NPN pairs. The dual configuration in a single package offers space savings and thermal tracking.
The 2N2914 is available in a TO-78 metal can package (also referenced as TO-77-8).
The RoHS status is reported as RoHS3 Compliant but is unverified. DigiKey reports non-compliant. Verify with manufacturer.
The maximum collector-emitter voltage (Vceo) is 45V.
The maximum collector current (Ic) is 30 mA.
The DC current gain ranges from 150 to 600 at Ic=0.01 mA and Vce=5V.
The typical transition frequency (fT) is 60 MHz.
The total power dissipation is 600 mW at 25°C ambient.