| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
208 pcs
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208 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
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The 2N2907AUB is a silicon planar PNP transistor designed for aerospace and Hi-Rel applications. It is available in hermetic packages and offers linear gain characteristics. Key electrical ratings include a maximum collector-emitter voltage (VCEO) of -60V and a maximum collector current (IC) of 0.6A. The transistor also exhibits a minimum HFE of 100 at 10V and 150mA.
This device is suitable for applications requiring high reliability. The LCC-3UB package is a surface mount type. The product is qualified under JAN and ESCC systems, indicating compliance with MIL-PRF-19500 and ESCC 5000 standards respectively.
It is important to note that while the datasheet mentions ESCC and JANS qualification, the specific compliance status for RoHS, REACH, and MSL in the existing database is marked with low confidence and requires verification.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.85 | $0.85 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2N2907AUB is -60V.
The maximum collector current (IC) for the 2N2907AUB is 0.6A.
The minimum HFE for the 2N2907AUB is 100 at 10V and 150mA.
The 2N2907AUB is available in the LCC-3UB package.