| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
56 pcs
|
56 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Radiation Tolerance | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N2907AUB is a PNP bipolar junction transistor manufactured by Microchip Technology. It is designed for high-reliability applications requiring radiation tolerance. Key electrical specifications include a collector-emitter voltage (Vce) of 60V, a continuous collector current (Ic) of 600mA, and a power dissipation of 500mW. The DC current gain (hFE) is a minimum of 100 at 150mA collector current and 10V Vce. The collector-emitter saturation voltage (Vce(sat)) is a maximum of 1.6V at 50mA base current and 500mA collector current.
The transistor is qualified per MIL-PRF-19500/255, offering radiation hardening with levels available from 3K to 1MEG Rads (Si) depending on screening level. It operates over a junction temperature range of -65°C to 200°C.
The 2N2907AUB is housed in a surface mount UB package (3-SMD, No Lead), making it suitable for compact and rugged designs. This package is designed for high-reliability soldering and is compatible with standard surface mount assembly processes.
Typical applications include switching and amplification circuits in military, aerospace, and other radiation-prone environments where consistent performance under extreme conditions is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $6.23 | $6.23 |
| 100+ | $5.79 | $5.79 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
PNP.
60 V.
600 mA.
500 mW.
-65°C to 200°C (junction temperature).
3-SMD, No Lead (UB package).
Yes, qualified per MIL-PRF-19500/255 with radiation levels from 3K to 1MEG Rads (Si) depending on screening level.