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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
200 pcs
|
200 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request | |
|
66 pcs
|
66 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
6 pcs
|
6 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N2907A is a PNP bipolar junction transistor manufactured by STMicroelectronics. It is designed for general-purpose switching and amplification applications.
Key electrical specifications include a collector-emitter breakdown voltage of 60 V, a continuous collector current rating of 600 mA, and a power dissipation of 400 mW. The device offers a minimum DC current gain (hFE) of 100 at 150 mA collector current and 10 V Vce, and a transition frequency of 200 MHz.
The transistor is supplied in a through-hole TO-18 (TO-206AA) metal can package, suitable for socketed or soldered mounting on printed circuit boards. The maximum junction temperature is 175°C.
The collector-emitter voltage (Vce) is rated at 60 V.
The maximum continuous collector current (Ic) is 600 mA.
The 2N2907A is available in a through-hole TO-18 (TO-206AA) metal can package.
The maximum junction temperature is 175°C.
The part is listed as RoHS3 compliant, but this information is unverified.
The minimum DC current gain (hFE) is 100 at Ic=150mA and Vce=10V.
The transition frequency (ft) is 200 MHz.