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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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30 pcs
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30 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Power | |
| SVHC Present | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N2907A is a PNP bipolar junction transistor designed for general-purpose switching and amplification applications. It features a collector-emitter voltage rating of 40V and a collector current rating of 600mA, with a power dissipation of 400mW. The device offers a minimum DC current gain of 100 at 150mA collector current and 10V collector-emitter voltage, and a maximum collector-emitter saturation voltage of 1.6V at 50mA base current and 500mA collector current.
This transistor is housed in a TO-206AA (TO-18-3) metal can package with through-hole mounting, making it suitable for breadboard prototyping and traditional PCB assembly. The metal can construction provides robust thermal performance and mechanical durability for demanding environments.
Typical applications include low-power switching circuits, signal amplification, and driver stages in audio, instrumentation, and control systems. The PNP polarity makes it suitable for complementary circuit designs when paired with NPN transistors.
Note: The manufacturer is listed as On Semiconductor, though external distributor data suggests Diotec Semiconductor may also supply this part. Verify the manufacturer for your specific procurement needs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.15 | $0.15 |
| 10+ | $0.11 | $0.11 |
| 100+ | $0.09 | $0.09 |
| 500+ | $0.07 | $0.07 |
| 1,000+ | $0.06 | $0.06 |
| 4,000+ | $0.05 | $0.05 |
| 8,000+ | $0.03 | $0.03 |
| 24,000+ | $0.03 | $0.03 |
| 48,000+ | $0.03 | $0.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 2N2907A is a PNP bipolar junction transistor.
The collector-emitter voltage (VCEO) is rated at 40V.
The maximum collector current (IC) is 600mA.
The 2N2907A comes in a TO-206AA (TO-18-3) metal can package with through-hole mounting.
The power dissipation (Pd) is rated at 400mW.
The minimum DC current gain (hFE) is 100 at 150mA collector current and 10V collector-emitter voltage.
The maximum collector-emitter saturation voltage (VCE(sat)) is 1.6V at 50mA base current and 500mA collector current.