2N2907A 2N2907A is a PNP bipolar junction transistor from Solid State Devices Inc. It features 40V collector-emitter breakdown voltage, 600mA collector current, and 400mW power dissipation in a TO-18 through-hole package.
Mfr Part #:

2N2907A

Available from 2 distributors
Mfr Name: Solid State Devices Inc (SSDI)
Solid State Devices Inc (SSDI)
2N2907A is a PNP bipolar junction transistor from Solid State Devices Inc. It features 40V collector-emitter breakdown voltage, 600mA collector current, and 400mW power dissipation in a TO-18 through-hole package.
Total Stock: 17,700 pcs

2N2907A Available from 2 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
17,475 pcs
17475 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
225 pcs
225 pcs On Request 1 On Request On Request On Request On Request On Request

2N2907A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2N2907A Description

Short technical summary and product information.

The 2N2907A is a PNP bipolar junction transistor manufactured by Solid State Devices Inc. It is designed for general purpose switching and amplification applications. The transistor features a collector-emitter breakdown voltage of 40V and a maximum collector current of 600mA, making it suitable for low to medium power circuits.

 

The device offers a DC current gain (hFE) of at least 100 at 150mA collector current and 10V VCE, ensuring consistent performance. The maximum VCE saturation voltage is 1.6V at 50mA base current and 500mA collector current. With a transition frequency of 200MHz, it can be used in moderate frequency switching applications.

 

The 2N2907A is housed in a TO-18 (TO-206AA) metal can package, which is a through-hole mounting type. It can operate over a wide temperature range from -65°C to 200°C junction temperature. The power dissipation is rated at 400mW.

 

This transistor is commonly used in switching circuits, driver stages, and low-power amplifier designs. Its PNP polarity complements NPN transistors like the 2N2222A in push-pull configurations.

2N2907A Quick Information

Product Type: PNP Bipolar Transistor
Canonical Name: 2N2907A PNP Bipolar Junction Transistor
Subcategory: Single BJTs

2N2907A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N2907A Features

  • PNP bipolar junction transistor.
  • 40V collector-emitter breakdown voltage.
  • 600mA maximum collector current.
  • 400mW power dissipation.
  • TO-18 through-hole package.

2N2907A Applications

  • General purpose switching circuits.
  • Low-power amplifier stages.
  • Driver transistors for relays.
  • Complementary pair with NPN transistors.

2N2907A FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the 2N2907A?

The maximum collector-emitter breakdown voltage (VCEO) is 40V.

What package does the 2N2907A come in?

The 2N2907A is available in a TO-206AA, TO-18-3 Metal Can package, with the supplier device package being TO-18.

What is the operating temperature range of the 2N2907A?

The operating temperature range is -65°C to 200°C (junction temperature).

Is the 2N2907A RoHS compliant?

The RoHS status is listed as RoHS3 Compliant, but this is unverified and there are conflicting reports from distributors.

What is the DC current gain (hFE) of the 2N2907A?

The minimum DC current gain (hFE) is 100 at Ic=150mA, Vce=10V.

What is the saturation voltage of the 2N2907A?

The maximum VCE saturation voltage is 1.6V at Ib=50mA, Ic=500mA.

What is the transition frequency of the 2N2907A?

The transition frequency (ft) is 200 MHz.

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