| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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300 pcs
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300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N2907 is a PNP bipolar junction transistor (BJT) designed for switching and low-power general-purpose amplification applications. It offers a maximum collector-to-emitter voltage (VCEO) of 40V and a maximum collector current (IC) of 600mA.
This transistor operates within a temperature range of -65°C to +150°C and has a power dissipation of 400mW at ambient temperature. The DC current gain (hFE) ranges from 100 to 300. It is housed in a TO-92 package, making it suitable for through-hole mounting.
The 2N2907 is a bipolar device where conduction is carried out by both holes and electrons, with holes being the majority charge carriers. In PNP transistors, the base must be negative with respect to the emitter for conduction, and the collector-base junction is reverse-biased, meaning the collector is more negative than the base.
This transistor is often used in applications such as Darlington pairs, siren circuits, LED flashers, and various other switching and low-power amplification tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-to-emitter voltage (VCEO) for the 2N2907 is 40V.
The maximum collector current (IC) for the 2N2907 is 600mA.
The operating and storage temperature range for the 2N2907 is -65°C to +150°C.
The 2N2907 transistor is supplied in a TO-92 package.
The 2N2907 is listed as RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the 2N2907 is 1 Unlimited.