2N2907

The 2N2907 is a PNP bipolar junction transistor (BJT) manufactured by NXP Semiconductors, primarily designed for switching and low-power general-purpose amplification applications. It offers the capability to operate at high speeds and moderate temperatures.

Key electrical specifications include a maximum collector-to-emitter voltage (VCEO) of 40V, a collector-to-base voltage (VCBO) of 60V, and an emitter-to-base voltage (VEBO) of 5V. The maximum collector current (IC) is 600mA, with a power dissipation of 400mW at ambient temperature. The DC current gain (hFE) typically ranges from 100 to 300.

This transistor is housed in a TO-92 package, making it suitable for through-hole mounting. Its operating and storage temperature range is from -65°C to +150°C. The 2N2907 is a current-controlled device where a small base current controls a larger collector current, with conduction carried out by both holes and electrons, predominantly holes in PNP transistors.

Applications for the 2N2907 include use in Darlington pairs, siren or dual LED/lamp flashers, various switching circuits, and low-power amplifications. It is a versatile component for general electronic designs requiring a PNP switching or amplification transistor.