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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,050 pcs
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5050 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N2906A is a PNP bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose switching and amplification applications.
Key electrical specifications include a maximum collector-emitter breakdown voltage (Vceo) of 40V, a maximum collector current (Ic) of 600mA, and a maximum power dissipation of 400mW. The device offers a minimum DC current gain (hFE) of 40 at Ic=150mA and Vce=10V, with a maximum Vce saturation voltage of 1.6V at Ib=50mA and Ic=500mA.
The transistor is housed in a TO-206AA (TO-18-3 Metal Can) package with through-hole mounting, and the supplier device package is TO-18. This metal can package provides robust mechanical protection and reliable performance in various environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.05 | $4.05 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (Ic) is 600 mA.
The maximum collector-emitter breakdown voltage (Vceo) is 40 V.
The package is TO-206AA, TO-18-3 Metal Can, with a supplier device package of TO-18.
The mounting type is Through Hole.
The minimum DC current gain (hFE) is 40 at Ic=150mA and Vce=10V.
The maximum power dissipation is 400 mW.
The transistor type is PNP.