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2N2905A The 2N2905A is a PNP bipolar junction transistor rated for 60V collector-emitter breakdown voltage and 600mA collector current. It comes in a TO-39 through-hole metal can package.
Mfr Part #:

2N2905A

Available from 5 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The 2N2905A is a PNP bipolar junction transistor rated for 60V collector-emitter breakdown voltage and 600mA collector current. It comes in a TO-39 through-hole metal can package.
✓ Total Stock: 1,000 pcs

2N2905A Available from 5 distributors

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2N2905A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Lead Style
Military Grade
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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2N2905A Description

Short technical summary and product information.

The 2N2905A is a PNP bipolar junction transistor designed for general-purpose switching and amplification applications. It features a maximum collector-emitter breakdown voltage of 60V and a continuous collector current rating of 600mA, with a maximum power dissipation of 600mW.

 

Electrical characteristics include a minimum DC current gain (hFE) of 100 at 150mA collector current and 10V Vce, and a maximum saturation voltage of 1.6V at 500mA collector current. The transistor has a transition frequency of 200MHz, making it suitable for moderate-speed switching circuits.

 

The device is housed in a TO-205AD (TO-39-3) metal can package and is designed for through-hole mounting. It can operate at junction temperatures up to 175°C.

2N2905A Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: 2N2904/2N2905
Canonical Name: 2N2905A PNP Bipolar Transistor
Subcategory: Single PNP

2N2905A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

2N2905A Features

  • PNP bipolar junction transistor design.
  • Rated for 60V collector-emitter voltage.
  • Supports 600mA continuous collector current.
  • Maximum power dissipation of 600mW.
  • Through-hole TO-39 metal can package.

2N2905A Applications

  • Used in general-purpose switching circuits.
  • Suitable for linear amplification stages.
  • Ideal for moderate-speed signal processing.

2N2905A FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the 2N2905A?

The maximum collector-emitter breakdown voltage (Vce) is 60V.

What is the maximum collector current rating?

The maximum continuous collector current (Ic) is 600mA.

What is the power dissipation of this transistor?

The maximum power dissipation is 600mW.

What package does the 2N2905A come in?

It comes in a TO-205AD (TO-39-3) metal can package, with a supplier device package of TO-39.

What is the operating temperature range?

The maximum junction temperature (TJ) is 175°C.

What is the DC current gain (hFE) of the 2N2905A?

The minimum DC current gain (hFE) is 100 at Ic=150mA and Vce=10V.

What is the transition frequency of this transistor?

The transition frequency (ft) is 200MHz.

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