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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The RAYTHEON 2N2905 is a PNP bipolar junction transistor designed for high-speed switching and driver applications. It features a maximum collector current of 600mA and a collector-base voltage rating of 60V.
This transistor operates effectively in high-speed saturated switching scenarios. Key electrical characteristics include a transition frequency of 200MHz and a DC current gain (hFE) ranging from 100 to 300 under specific test conditions.
The 2N2905 is housed in a TO-39 metal package, suitable for through-hole mounting. Its NPN complements are the 2N2219 and 2N2219A series.
Applications include general-purpose switching and driver functions in industrial service.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 40V for the 2N2905.
The 2N2905 is available in a TO-39 package.
The operating ambient temperature range is -65 to +150°C.
The DC current gain (hFE) ranges from 100 to 300 at IC=-150mA, VCE=-10V.
The transition frequency is typically 200 MHz.