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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N2905 is a PNP bipolar junction transistor (BJT) manufactured by Texas Instruments, housed in a TO-39 metal package. It is designed for high-speed saturated switching and general-purpose applications, as well as driver applications in industrial service.
Key electrical characteristics include a maximum collector-base voltage (VCBO) of 60V and a maximum collector-emitter voltage (VCEO) of 40V for the 2N2905 variant. The continuous collector current (IC) is rated up to 600mA, with a peak collector current (ICM) of 800mA. The DC current gain (hFE) ranges from 100 to 300 at IC = -150mA and VCE = -10V. The transition frequency (fT) is a minimum of 200MHz under specified conditions.
Thermal performance is supported by a junction-to-ambient thermal resistance of 292 K/W and a junction-to-case thermal resistance of 58 K/W. The operating ambient temperature range is -65°C to +150°C.
This transistor is suitable for applications requiring fast switching speeds and moderate current handling capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum DC collector current is 600 mA, with a peak rating of 800 mA.
The collector-emitter breakdown voltage (open base) is 40 V.
The 2N2905 is housed in a TO-39 through-hole package.
The operating ambient temperature range is -65°C to +150°C.
At a collector current of -150 mA and VCE = -10 V, the DC current gain (hFE) ranges from 100 to 300.
The transition frequency (fT) is a minimum of 200 MHz at IC = -50 mA and VCE = -20 V.
The collector-emitter saturation voltage is 400 mV maximum at IC = -150 mA and IB = -15 mA.