| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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113 pcs
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113 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N2905 is a PNP bipolar junction transistor manufactured by Rectron Semiconductor, suitable for high-speed switching and general-purpose driver applications. It is housed in a TO-39 metal package.
Key electrical characteristics include a maximum collector-base voltage (VCBO) of 60V and a maximum collector-emitter voltage (VCEO) of 40V for the 2N2905 variant and 60V for the 2N2905A. The continuous collector current (IC) is rated up to 600mA, with a peak collector current (ICM) of 800mA. The DC current gain (hFE) ranges from 100 to 300 at IC = -150mA and VCE = -10V. The transition frequency (fT) is 200MHz at IC = -50mA and VCE = -20V.
Thermal specifications include a total power dissipation of 600mW at an ambient temperature of 25°C and 3W when the case temperature is at 25°C. The junction temperature can reach up to 200°C, with storage temperatures ranging from -65°C to +150°C.
This transistor is designed for applications requiring fast switching speeds and moderate current handling capabilities. Its TO-39 package is suitable for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-base voltage (V_CBO) is 60V with the emitter open.
The maximum DC collector current is 600mA, with a peak of 800mA.
The 2N2905 is available in a TO-39 through-hole package.
The operating ambient temperature range is -65°C to +150°C.
The transition frequency (f_T) is 200MHz minimum at I_C = -50mA and V_CE = -20V.