2N2905 PNP bipolar transistor with 40V collector-emitter breakdown voltage and 600mA collector current. Housed in a TO-39 metal can package.
Mfr Part #:

2N2905

Available from 1 distributors
Mfr Name: Solid State Devices Inc (SSDI)
Solid State Devices Inc (SSDI)
PNP bipolar transistor with 40V collector-emitter breakdown voltage and 600mA collector current. Housed in a TO-39 metal can package.
Total Stock: 6 pcs

2N2905 Available from 1 distributor

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2N2905 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base-Emitter Saturation Voltage (Max)
Collector Cut-Off Current (Max)
Collector-Base Breakdown Voltage (Min)
Collector-Emitter Breakdown Voltage (Min)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Breakdown Voltage (Min)
Frequency
H Fe (@ Ic=10 mA, Vce=10 V)
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Transition Frequency
V Ce Sat (Maximum @ Ib=1 mA, Ic=10 mA)
Vce Saturation (Max) @ Ib, Ic
Voltage

2N2905 Description

Short technical summary and product information.

The 2N2905 is a PNP bipolar transistor designed for high-speed switching applications. It features a collector-emitter breakdown voltage of -40V and a continuous collector current of 600mA. The device offers low leakage currents and low saturation voltage, with a maximum VCE(sat) of -0.5V at 10mA/1mA. DC current gain ranges from 50 to 240 at 10mA/10V, with a minimum of 100 at 150mA/10V. Transition frequency is between 100 and 300 MHz, making it suitable for moderate-speed switching and amplification.

 

The transistor is housed in a TO-39 metal can package (TO-205AD) and is through-hole mountable. It operates over a junction temperature range of -55°C to 125°C, with a maximum power dissipation of 600mW. The part is RoHS3 compliant per distributor data, though this is unverified.

 

Typical applications include general-purpose switching, driver stages, and signal amplification in low-power circuits. The TO-39 package provides robust thermal performance and mechanical durability.

2N2905 Quick Information

Product Type: Bipolar Transistor
Canonical Name: 2N2905 PNP Bipolar Transistor
Subcategory: Single Bipolar Transistor

2N2905 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N2905 Features

  • PNP transistor in TO-39 metal can.
  • 40V collector-emitter breakdown voltage.
  • 600mA continuous collector current.
  • Low saturation voltage for efficient switching.
  • Transition frequency up to 300 MHz.

2N2905 Applications

  • Used in high-speed switching circuits.
  • Suitable for general purpose amplification.
  • Ideal for low-power driver stages.
  • Applicable in signal processing modules.

2N2905 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the package type of the 2N2905?

TO-39 metal can (TO-205AD).

What is the operating temperature range?

-55°C to 125°C junction temperature.

Is the 2N2905 RoHS compliant?

RoHS3 compliant (unverified, low confidence).

What is the collector-emitter breakdown voltage?

-40V.

What is the DC current gain?

Minimum 100 at 150mA/10V, typical range 50-240 at 10mA/10V.

What is the transition frequency?

100-300 MHz.

What is the mounting type?

Through hole.

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