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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6 pcs
|
6 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base-Emitter Saturation Voltage (Max) | |
| Collector Cut-Off Current (Max) | |
| Collector-Base Breakdown Voltage (Min) | |
| Collector-Emitter Breakdown Voltage (Min) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Breakdown Voltage (Min) | |
| Frequency | |
| H Fe (@ Ic=10 mA, Vce=10 V) | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Transition Frequency | |
| V Ce Sat (Maximum @ Ib=1 mA, Ic=10 mA) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N2905 is a PNP bipolar transistor designed for high-speed switching applications. It features a collector-emitter breakdown voltage of -40V and a continuous collector current of 600mA. The device offers low leakage currents and low saturation voltage, with a maximum VCE(sat) of -0.5V at 10mA/1mA. DC current gain ranges from 50 to 240 at 10mA/10V, with a minimum of 100 at 150mA/10V. Transition frequency is between 100 and 300 MHz, making it suitable for moderate-speed switching and amplification.
The transistor is housed in a TO-39 metal can package (TO-205AD) and is through-hole mountable. It operates over a junction temperature range of -55°C to 125°C, with a maximum power dissipation of 600mW. The part is RoHS3 compliant per distributor data, though this is unverified.
Typical applications include general-purpose switching, driver stages, and signal amplification in low-power circuits. The TO-39 package provides robust thermal performance and mechanical durability.
TO-39 metal can (TO-205AD).
-55°C to 125°C junction temperature.
RoHS3 compliant (unverified, low confidence).
-40V.
Minimum 100 at 150mA/10V, typical range 50-240 at 10mA/10V.
100-300 MHz.
Through hole.