| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N2905 is a PNP bipolar junction transistor manufactured by Microchip Technology, housed in a through-hole TO-39 metal can package (TO-205AD). It is designed for general-purpose switching and amplification applications. Key electrical specifications include a collector-emitter voltage (VCEO) of 60V, a collector cut-off current of 1µA, and a DC current gain (hFE) of minimum 100 at 150mA collector current and 10V Vce. The transistor can dissipate up to 800mW of power and operates over a junction temperature range of -65°C to 200°C. The TO-39 package provides robust mechanical support and good thermal performance for medium-power designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $21.59 | $21.59 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) is 60V.
It comes in a TO-205AD, TO-39-3 Metal Can package (TO-39).
The junction operating temperature range is -65°C to 200°C.
RoHS status is reported as RoHS3 Compliant, but this is unverified and low confidence.
The minimum DC current gain is 100 at Ic=150mA, Vce=10V.
The maximum Vce saturation voltage is 1.6V at Ib=50mA, Ic=500mA.