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414 pcs
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414 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-23 21:33:16 |
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The Central Semiconductor Corp 2N2904A is a silicon PNP transistor manufactured using the epitaxial planar process. It is designed for small signal, general purpose, and switching applications.
Key electrical characteristics include a Collector-Emitter Voltage (VCEO) of 60V and a Continuous Collector Current (IC) of 0.6A. The transistor offers a maximum power dissipation of 0.8W at ambient temperature and up to 3.0W at 25°C case temperature. Its operating and storage junction temperature range is -65°C to +200°C.
This transistor comes in a TO-5 case and is suitable for through-hole mounting. Electrical specifications include a transition frequency (fT) of 200MHz at 50mA and an output capacitance (Cob) of 8.0pF. Various DC current gain (hFE) values are specified depending on the collector current, ranging from 40 to 300.
The 2N2904A is well-suited for applications requiring a general-purpose PNP transistor with moderate power handling capabilities and a wide operating temperature range.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 60V.
The package type is TO-5.
The operating and storage junction temperature range is -65°C to +200°C.
The continuous collector current rating is 0.6A.
At a collector current of 150mA, the DC current gain is 40 to 120.
The transition frequency is 200MHz.
The maximum power dissipation is 0.8W at ambient temperature and 3W at case temperature.