| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3 pcs
|
3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Military Grade | |
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| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N2904A is a PNP switching silicon transistor designed for general-purpose switching and amplification applications. It features a maximum collector-emitter voltage (VCEO) of 60V and a continuous collector current of 600mA, with a power dissipation of 3W when mounted on a heat sink at case temperature 25°C. The device offers a minimum DC current gain (hFE) of 40 at 500mA collector current, and a low collector-emitter saturation voltage of 1.6V maximum at 500mA. It is qualified to MIL-PRF-19500/290 standards, ensuring high reliability. The transistor comes in a surface-mount TO-236AB (SOT-23) package, making it suitable for compact PCB designs. Operating and storage temperature range is -65°C to +200°C.
60 V
600 mA
3 W at case temperature 25°C
Minimum 40 at IC=500 mA, VCE=10 V
Surface-mount TO-236AB (SOT-23)
-65°C to +200°C
RoHS3 Compliant (unverified)