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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3 pcs
|
3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Emitter Saturation Voltage (Maximum @ IC = 150 mA, IB = 15 mA) | |
| Base Emitter Saturation Voltage (Maximum @ IC = 500 mA, IB = 50 mA) | |
| Collector-Base Cutoff Current (ICBO) | |
| Collector-Base Voltage (VCBO) | |
| Collector-Emitter Breakdown Voltage (V(BR)CEO) | |
| Collector-Emitter Cutoff Current (Ices) | |
| Current | |
| DC Current Gain (Minimum @ IC = 0.1 mA, VCE = 10 V) | |
| DC Current Gain (Minimum @ IC = 500 mA, VCE = 10 V) | |
| DC Current Gain (Minimum @ Ic=10 mA, Vce=10 V) | |
| DC Current Gain (Minimum/Maximum @ IC = 1 mA, VCE = 10 V) | |
| DC Current Gain (Minimum/Maximum @ IC=150 mA, VCE=10 V) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Cutoff Current (IEBO) | |
| Emitter-Base Voltage (VEBO) | |
| Input Capacitance (Cibo) | |
| Military Grade | |
| Mounting Type | |
| Operating Storage Temperature Range (Minimum/Maximum) | |
| Output Capacitance (Cobo) | |
| Power | |
| Small-Signal Cutoff Frequency (hfe) | |
| Small-Signal Cutoff Frequency, Magnitude (|hfe|) | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance Junction-to-Case (RθJC) | |
| Transistor Type | |
| Turn-Off Time (toff) | |
| Turn-On Time (ton) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Vce Saturation (Maximum @ IC = 150 mA, IB = 15 mA) | |
| Voltage |
The 2N2904A is a PNP switching silicon transistor designed for general-purpose switching and amplification applications. It features a maximum collector-emitter voltage (VCEO) of 60V and a continuous collector current of 600mA, with a power dissipation of 3W when mounted on a heat sink at case temperature 25°C. The device offers a minimum DC current gain (hFE) of 40 at 500mA collector current, and a low collector-emitter saturation voltage of 1.6V maximum at 500mA. It is qualified to MIL-PRF-19500/290 standards, ensuring high reliability. The transistor comes in a surface-mount TO-236AB (SOT-23) package, making it suitable for compact PCB designs. Operating and storage temperature range is -65°C to +200°C.
60 V
600 mA
3 W at case temperature 25°C
Minimum 40 at IC=500 mA, VCE=10 V
Surface-mount TO-236AB (SOT-23)
-65°C to +200°C
RoHS3 Compliant (unverified)