| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,500 pcs
|
3500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Tape & Reel | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N2896 is a general-purpose NPN bipolar junction transistor manufactured by Microchip Technology. It is designed for through-hole mounting in a TO-206AA / TO-18-3 metal can package (supplier package TO-18).
Key electrical ratings include a maximum collector-emitter voltage of 90V, a maximum collector current of 1A, and a maximum power dissipation of 1.8W. The transistor offers a minimum DC current gain (hFE) of 60 at 150mA collector current and 10V Vce, with a typical transition frequency of 120MHz. The maximum collector-emitter saturation voltage is 600mV at 15mA base current and 150mA collector current.
This device is suitable for general switching and amplification applications where moderate voltage and current handling are required. The TO-18 metal can package provides robust mechanical and thermal performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $18.31 | $18.31 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vce) is 90V.
The maximum collector current (Ic) is 1A.
It uses a through-hole TO-206AA / TO-18-3 metal can package (supplier package TO-18).
The typical transition frequency (ft) is 120MHz.
The RoHS status is listed as RoHS3 Compliant, but this information is unverified.