LM431ACZXA
On Semiconductor
The LM431ACZXA from On Semiconductor is an adjustable shunt voltage reference. It offers a wide output voltage range and is suitable for various power management applications.
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The 2N2861 is a silicon bipolar junction transistor (BJT) manufactured by Texas Instruments. It is designed for high-frequency applications, with a transition frequency (fT) of 30 MHz.
Key electrical characteristics include a maximum continuous collector current (IC MAX) of 100 mA and a maximum continuous collector power dissipation (PC MAX) of 300 mW. The collector-emitter breakdown voltage (VCEO) is rated at a minimum of 20V and typically 25V. The static current gain (hFE) is a minimum of 60 under specific test conditions (IC = 1 mA, VCE = 20 V).
This transistor is housed in a TO-18 package and is designed for through-hole mounting. Its specifications make it suitable for various general-purpose amplification and switching applications in electronic circuits where high-frequency performance is required.
| Qty | Low | High |
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| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous collector current for the 2N2861 is 100 mA.
The maximum continuous collector power dissipation for the 2N2861 is 300 mW.
The transition frequency (fT) of the 2N2861 is 30 MHz.
The minimum collector-emitter breakdown voltage (VCEO) for the 2N2861 is 20V.
The typical collector-emitter breakdown voltage (VCEO) for the 2N2861 is 25V.
The minimum static current gain (hFE) for the 2N2861 is 60.
The 2N2861 transistor is in a TO-18 package.
