| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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The 2N2857UB is an NPN RF bipolar junction transistor from Microsemi Corporation designed for low-power RF amplifier and oscillator applications. It delivers a nominal gain of 21 dB with a typical noise figure of 4.5 dB at 450 MHz, making it suitable for front-end receiver stages and other signal conditioning circuits where low noise and moderate gain are required.
Electrical specifications include a maximum collector-emitter breakdown voltage of 15 V and a maximum collector current of 40 mA, with power dissipation rated at 200 mW. The device has a DC current gain (hFE) of 30 minimum at Ic=3 mA and Vce=1 V.
The transistor is housed in a compact 3-SMD, No Lead package with supplier device package designation UB, enabling surface mount assembly. It supports an operating junction temperature range from -65°C to 200°C. The part is RoHS3 compliant, REACH unaffected, and has an MSL rating of 1 (Unlimited).
| Qty | Low | High |
|---|---|---|
| 100+ | $32.63 | $32.63 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
NPN
15 V
40 mA
200 mW
4.5 dB at 450 MHz
21 dB
-65°C to 200°C