| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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94 pcs
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94 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N2857 is a silicon NPN transistor designed for UHF equipment applications. It is particularly well-suited for use in low noise amplifiers, oscillators, and mixer circuits. The transistor features a Collector-Emitter Voltage (VCEO) of 15V and a maximum Collector Current (IC) of 40mA.
With a Current-Gain Bandwidth Product (fT) of 1.6 GHz at 5mA IC and a typical Maximum Unilateral Gain (GU max) of 13 dB at 500 MHz, the 2N2857 is engineered for high-frequency performance. It is housed in a TO-72 package, suitable for through-hole mounting.
Key electrical specifications include a Collector-Base Voltage (VCBO) of 30V and an Emitter-Base Voltage (VEBO) of 2.5V. The device offers a DC Current Gain (HFE) ranging from 30 to 150. Thermal data indicates a Junction-to-Case Thermal Resistance (RTH(J-C)) of 0.88 ºC/mW.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage (VCEO) for the 2N2857 is 15 V.
The maximum Collector Current (IC) for the 2N2857 is 40 mA.
The 2N2857 is supplied in a TO-72 package.
The Current-Gain Bandwidth Product (fT) for the 2N2857 is 1.6 GHz.
The typical Noise Figure (NF) for the 2N2857 is 5.5 dB.
The typical Maximum Unilateral Gain (GU max) for the 2N2857 is 13 dB.