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2N2857 2N2857 is an NPN RF bipolar transistor from Microsemi. It features 15V collector-emitter breakdown voltage, 500MHz transition frequency, and 200mW power dissipation in a TO-72 metal can package.
Mfr Part #:

2N2857

Available from 2 distributors
Mfr Name: Microsemi Corporation
Microsemi Corporation
2N2857 is an NPN RF bipolar transistor from Microsemi. It features 15V collector-emitter breakdown voltage, 500MHz transition frequency, and 200mW power dissipation in a TO-72 metal can package.
✓ Total Stock: 2,503 pcs

2N2857 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
2,500 pcs
On Request
2500 pcs On Request 1 On Request On Request On Request On Request On Request
DYNACO PRODUCTS ✓
Non-Authorised Inventory information
3 pcs
On Request
3 pcs On Request 1 On Request On Request On Request On Request On Request
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2N2857 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Gain
Lead Style
Mounting Type
Noise Figure (dB Typ @ f)
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Voltage
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2N2857 Description

Short technical summary and product information.

The 2N2857 is an NPN bipolar junction transistor designed for RF applications. Manufactured by Microsemi Corporation, it offers a maximum collector-emitter breakdown voltage of 15V and a maximum collector current of 40mA. With a transition frequency of 500MHz, it is suitable for high-frequency amplification and switching circuits.

 

The transistor provides a DC current gain (hFE) of 30 minimum at 3mA collector current and 1V VCE. Typical noise figure is 4.5dB at 450MHz, and gain ranges from 12.5dB to 21dB at the same frequency. Maximum power dissipation is 200mW.

 

The device is housed in a TO-206AF / TO-72-4 metal can package with through-hole mounting. It operates over a junction temperature range of -65°C to 200°C. The TO-72 package offers good thermal performance and RF shielding.

2N2857 Quick Information

Product Type: RF Bipolar Transistor
Canonical Name: 2N2857 NPN RF Transistor
Subcategory: RF Transistor

2N2857 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N2857 Features

  • NPN RF transistor with 500MHz transition frequency.
  • Maximum collector-emitter voltage of 15V.
  • Maximum collector current of 40mA.
  • Power dissipation up to 200mW.
  • Through-hole TO-72 metal can package.

2N2857 Applications

  • Used in RF amplifier circuits up to 500MHz.
  • Suitable for oscillator and mixer stages.
  • Ideal for low-power RF signal processing.
  • Common in communication equipment designs.

2N2857 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the transistor type of the 2N2857?

NPN.

What is the maximum collector-emitter voltage?

15V.

What is the maximum collector current?

40mA.

What is the transition frequency?

500MHz.

What is the operating temperature range?

-65°C to 200°C (junction).

What package does the 2N2857 come in?

TO-206AF / TO-72-4 metal can, through-hole.

Is the 2N2857 RoHS compliant?

RoHS3 compliant (unverified).

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