| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The 2N2819 is a single NPN bipolar junction transistor (BJT) manufactured by Vishay Dale. It is designed for general purpose power applications and comes in a TO-63 package.
Key electrical characteristics include a maximum collector-emitter voltage (Vce) of 80V and a maximum continuous collector current (Ic) of 25A. The minimum DC current gain (hFE) is specified at 10. The transistor is constructed from silicon and is configured as a single element.
The TO-63 package is a post/stud mount type with a round shape and metal body. It features solder lug terminals positioned at the upper part of the package. This configuration is suitable for power applications where heat dissipation is a consideration.
This transistor is suitable for various power switching and amplification tasks in industrial and general electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (IC) for the 2N2819 is 25 A.
The maximum collector-emitter voltage for the 2N2819 is 80 V.
The minimum DC current gain (hFE) for the 2N2819 is 10.
The transistor polarity of the 2N2819 is NPN.
The 2N2819 is a General Purpose Power Transistor.
The 2N2819 has 3 terminals.
The 2N2819 comes in a TO-63 Post/Stud Mount package.