| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N2647 is a silicon PN unijunction transistor designed for general purpose industrial applications. It is housed in a TO-18 (UJT) metal can package with through-hole mounting and wire lead terminations.
Key electrical characteristics include a maximum emitter reverse voltage of 30V, interbase voltage of 35V, RMS emitter current of 50mA, and peak emitter current of 2.0A. The intrinsic standoff ratio ranges from 0.68 to 0.82, and interbase resistance is between 4.7 and 9.1 kΩ. The device operates over a junction temperature range of -65°C to +150°C.
This unijunction transistor is suitable for pulse and timing circuits, oscillators, and trigger circuits where its negative resistance characteristic is utilized.
The maximum power dissipation is 300mW.
The operating junction temperature range is -65°C to +150°C.
The 2N2647 is available in a TO-18 (UJT) metal can package.
The intrinsic standoff ratio ranges from 0.68 to 0.82.
The maximum emitter reverse voltage is 30V.