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19 pcs
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19 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N2646 is a general-purpose silicon PN Unijunction Transistor from DSI, suitable for various industrial applications. It is primarily used as a triggering device and is not designed for driving power loads.
Key electrical specifications include a low emitter reverse current of 0.005µA (typical), a maximum voltage between the two bases (VB2B1) of 35V, and a maximum emitter reverse voltage (VB2E) of 30V. The device can handle a maximum RMS emitter current of 50mA and a maximum peak emitter current of 2A. Its operating temperature range spans from -65°C to +150°C, with a maximum power dissipation of 300mW.
This transistor is particularly useful in designing firing circuits for Silicon Controlled Rectifiers and other applications requiring a guaranteed minimum pulse amplitude, low emitter leakage current, and a low peak point emitter current. It is available with Sn/Pb plating and is not RoHS compliant.
The 2N2646 is typically mounted through a hole in the PCB. Its pin configuration includes Base 1, Emitter, and Base 2, with the conductive case internally connected to Base 2.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum voltage between the two bases (VB2B1) for the 2N2646 transistor is 35V.
The 2N2646 transistor operates within a temperature range of -65°C to +150°C.
The maximum power dissipation for the 2N2646 transistor is 300mW.
The 2N2646 transistor is described as non-RoHS with Sn/Pb plating.