Mfr Part #:

2N2646

Mfr Name: GE

The GE 2N2646 is a general-purpose silicon PN Unijunction Transistor designed for industrial applications. It is popular as a triggering device.

✓ Total Stock: 1 pcs

$ Price Range: $1.93

2N2646 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Partservice ✓ Non-Authorised Inventory information	1 pcs On Request	1 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

2N2646 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

SELECT ALL

Category	New Products
Manufacturer Name	GE
Mounting Type	Through Hole
Operating Temperature	-65°C to +150°C
Power Dissipation	300mW

View Similar Products (0)

2N2646 Description

Short technical summary and product information.

The GE 2N2646 is a general-purpose silicon PN Unijunction Transistor suitable for various industrial applications, particularly as a triggering device. It is not designed for driving power loads but excels in applications requiring guaranteed minimum pulse amplitude and low emitter leakage current.

Key electrical specifications include a maximum voltage between bases (VB2B1) of 35V and a maximum emitter reverse voltage (VB2E) of 30V. The device can handle a maximum RMS emitter current of 50mA and a peak emitter current of 2A. It features a low typical emitter reverse current of 0.005µA.

Operating within a wide temperature range of -65°C to +150°C, the 2N2646 has a maximum power dissipation of 300mW. It is available with Sn/Pb plating and is offered in a non-RoHS compliant configuration. The transistor is typically housed in a TO-92 package and mounted through hole.

This unijunction transistor is commonly used in designing firing circuits for Silicon Controlled Rectifiers and in relaxation oscillator circuits for generating trigger pulses. Its characteristics make it a preferred choice for low-cost industrial applications where precise triggering is essential.

2N2646 Quick Information

Product Type: Unijunction Transistor

Canonical Name: 2N2646 Unijunction Transistor

Subcategory: Transistors

2N2646 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Non-RoHS (Sn/Pb plating)

2N2646 Estimated Pricing

Qty	Low	High
1+	$1.93	$1.93

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N2646 Features

General purpose silicon PN unijunction transistor.
Popular as a triggering device.
Low emitter reverse current: 0.005µA (Typ).
Wide operating temperature range: -65°C to +150°C.
Maximum power dissipation of 300mW.

2N2646 Applications

Used for designing firing circuits.
Suitable for relaxation oscillator circuits.
Preferred for low cost industrial applications.
Applications requiring minimum pulse amplitude.
Ideal for low emitter leakage current needs.

2N2646 FAQs

5 frequently asked questions generated from this part’s specifications.

What is the maximum voltage between the two bases (VB2B1) for the 2N2646 transistor?

The maximum voltage between the two bases (VB2B1) for the 2N2646 transistor is 35V.

What is the maximum emitter reverse voltage (VB2E) for the 2N2646 transistor?

The maximum emitter reverse voltage (VB2E) for the 2N2646 transistor is 30V.

What is the typical emitter reverse current of the 2N2646 transistor?

The typical emitter reverse current of the 2N2646 transistor is 0.005µA.

What is the operating temperature range for the 2N2646 transistor?

The operating temperature range for the 2N2646 transistor is -65°C to +150°C.

What is the maximum power dissipation of the 2N2646 transistor?

The maximum power dissipation of the 2N2646 transistor is 300mW.