| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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19 pcs
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19 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name |
The 2N2642 is a silicon bipolar junction transistor (BJT) manufactured by RAY. It is categorized as an NPN transistor and is suitable for high-frequency applications, with a transition frequency of 30 MHz.
Key electrical specifications include a minimum current gain (hFE) of 31 and a maximum collector current of 300 mA. The transistor has a breakdown voltage of 45V (V CEO / V CBO) and a maximum power dissipation of 31 mW.
This component is housed in a TO-18 package, a common through-hole form factor. Its design makes it suitable for various electronic circuits requiring amplification or switching at radio frequencies.
Environmental compliance data indicates RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status, though these are unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.06 | $0.06 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous collector current for the 2N2642 is 300 mA.
The transition frequency (fT) for the 2N2642 is a minimum of 30 MHz.
The 2N2642 has a breakdown voltage of 45V for both collector-emitter and collector-base.
The 2N2642 is available in a TO-18 package.