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25 pcs
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25 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N2642 is a silicon NPN bipolar transistor manufactured by Motorola Semiconductor. It is designed for high-frequency applications, with a gain bandwidth product (fT) of 30 MHz. The transistor offers a collector-emitter breakdown voltage (Vceo) of 45V and a maximum continuous collector current (Ic) of 300mA. It also has a maximum power dissipation of 300mW.
This component is housed in a TO-18 package, a common through-hole metal can package suitable for various electronic circuits. Its specifications make it suitable for general-purpose amplification and switching tasks in RF circuits.
Key electrical characteristics include a minimum static forward current transfer ratio (hFE) of 31. The transistor's construction and specifications align with its intended use in signal processing and amplification stages where frequency response is critical.
| Qty | Low | High |
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| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (Vceo) for the 2N2642 is 45V.
The maximum continuous collector current (Ic) for the 2N2642 is 300mA.
The gain bandwidth product (fT) for the 2N2642 is 30MHz.
The 2N2642 transistor is supplied in a TO-18 package.
The minimum static forward current transfer ratio (hFE) for the 2N2642 is 31.