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2N2639 Dual NPN low noise transistor array in a TO-78-6 metal can package. Features 45V VCEO, 30mA collector current, and 600mW total power dissipation.
Mfr Part #:

2N2639

Available from 1 distributors
Mfr Name: Motorola Semicondutor
Motorola Semicondutor
Dual NPN low noise transistor array in a TO-78-6 metal can package. Features 45V VCEO, 30mA collector current, and 600mW total power dissipation.
✓ Total Stock: 123 pcs

2N2639 Available from 1 distributor

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2N2639 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Number of Elements
Power
Supplier Device Package
Termination Style
Transistor Type
Voltage
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2N2639 Description

Short technical summary and product information.

The 2N2639 is a dual NPN low noise transistor array manufactured by Motorola Semiconductor. It consists of two NPN transistors in a single TO-78-6 metal can package, designed for applications requiring matched transistor characteristics.

 

Key electrical specifications include a collector-emitter breakdown voltage of 45V, a collector current rating of 30mA, and a total power dissipation of 600mW (both die equal power). The DC current gain (hFE) ranges from 50 to 300 at IC=10µA, VCE=5V, with a typical transition frequency of 40MHz. The device offers tight matching with hFE matching within 10% and VBE matching within 5mV, making it suitable for differential amplifier stages.

 

The 2N2639 is mounted in a through-hole TO-78-6 metal can package, providing robust mechanical and thermal performance. It is RoHS3 compliant (unverified), MSL level 1, and REACH unaffected.

2N2639 Quick Information

Product Type: Bipolar Transistor Array
Canonical Name: 2N2639 Dual NPN Low Noise Transistor Array
Subcategory: NPN Dual Transistor

2N2639 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N2639 Features

  • Dual NPN low noise transistor array.
  • 45V collector-emitter breakdown voltage.
  • 30mA continuous collector current.
  • 600mW total power dissipation.
  • TO-78-6 through-hole metal can package.

2N2639 Applications

  • Low noise differential amplifier circuits.
  • Signal conditioning and preamplifier stages.
  • Matched transistor pair applications.
  • Industrial and instrumentation equipment.

2N2639 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage (VCEO) of the 2N2639?

The VCEO is 45V.

What is the maximum collector current rating?

The maximum collector current is 30mA.

What is the total power dissipation of the 2N2639?

The total power dissipation is 600mW at TA=25°C (both die equal power).

What is the DC current gain (hFE) range?

The hFE range is 50 to 300 at IC=10µA, VCE=5V.

What package type does the 2N2639 use?

It uses a TO-78-6 metal can package.

What are the matching characteristics of the 2N2639?

hFE matching is within 10% and VBE matching is within 5mV.

Is the 2N2639 RoHS compliant?

It is listed as RoHS3 Compliant, but this is unverified and low confidence; distributor reports non-RoHS.

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