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2N2484 The 2N2484 is an NPN bipolar junction transistor from On Semiconductor. It features a 60V collector-emitter breakdown voltage, 50mA maximum collector current, and 360mW power dissipation in a TO-18 through-hole package.
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2N2484

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The 2N2484 is an NPN bipolar junction transistor from On Semiconductor. It features a 60V collector-emitter breakdown voltage, 50mA maximum collector current, and 360mW power dissipation in a TO-18 through-hole package.
✓ Total Stock: 98 pcs
$ Price Range: $3.57

2N2484 Available from 1 distributor

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2N2484 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Lead Style
Mounting Type
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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2N2484 Description

Short technical summary and product information.

The 2N2484 is a general-purpose NPN bipolar junction transistor manufactured by On Semiconductor. It is designed for low-power switching and amplification applications.

 

Key electrical specifications include a minimum collector-emitter breakdown voltage of 60V, a maximum collector current of 50mA, and a maximum power dissipation of 360mW. The DC current gain (hFE) is a minimum of 150 at 2mA collector current and 5V collector-emitter voltage. The maximum collector-emitter saturation voltage is 350mV at a base current of 100µA and collector current of 1mA.

 

The transistor is housed in a TO-18-2 metal can package and is intended for through-hole mounting. The supplier device package is TO-18.

2N2484 Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: 2N2484 NPN Bipolar Transistor
Subcategory: Single NPN

2N2484 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N2484 Estimated Pricing

Qty Low High
1+ $3.57 $3.57

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N2484 Features

  • NPN bipolar junction transistor design.
  • 60V minimum collector-emitter breakdown voltage.
  • 50mA maximum collector current rating.
  • 360mW maximum power dissipation capability.
  • TO-18 through-hole metal can package.

2N2484 Applications

  • General purpose low-power switching circuits.
  • Signal amplification in audio and control systems.
  • Low-current driver and interface applications.
  • Through-hole prototyping and breadboard designs.

2N2484 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the transistor type of the 2N2484?

The 2N2484 is an NPN bipolar junction transistor.

What is the collector-emitter breakdown voltage of the 2N2484?

The minimum collector-emitter breakdown voltage is 60V.

What is the maximum collector current of the 2N2484?

The maximum collector current is 50mA.

What is the power dissipation of the 2N2484?

The maximum power dissipation is 360mW.

What is the package type of the 2N2484?

The 2N2484 is available in a TO-18-2 Metal Can through-hole package.

What is the DC current gain (hFE) of the 2N2484?

The minimum DC current gain is 150 at Ic=2mA and Vce=5V.

What is the Vce saturation voltage of the 2N2484?

The maximum Vce saturation voltage is 350mV at Ib=100µA and Ic=1mA.

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