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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,900 pcs
|
3900 pcs | On Request | 1 | On Request | On Request | 90+ | On Request | On Request | |
|
56 pcs
|
56 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector-Base Voltage (VCBO) | |
| Collector-Emitter Cutoff Current (Ices) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Voltage (VEBO) | |
| Frequency | |
| Input Capacitance (Cibo) | |
| Lead Style | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Cobo) | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance Junction to Ambient (RθJA) | |
| Thermal Resistance Junction-to-Case (RθJC) | |
| Transistor Type | |
| Turn-Off Time (toff) | |
| Turn-On Time (ton) | |
| Vbe Sat (Maximum @ Ib=1 mA, Ic=10 mA) | |
| Vbe Sat (Maximum @ Ib=10 mA, Ic=100 mA) | |
| Vbe Sat (Maximum @ Ib=3 mA, Ic=30 mA) | |
| Vce Sat (Maximum @ Ib=1 mA, Ic=10 mA) | |
| Vce Sat (Maximum @ Ib=10 mA, Ic=100 mA) | |
| Vce Sat (Maximum @ Ib=3 mA, Ic=30 mA) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| hfe (Minimum/Maximum @ Ic=10 mA, Vce=0.35 V) | |
| hfe (Minimum/Maximum @ Ic=100 mA, Vce=1 V) | |
| hfe (Minimum/Maximum @ Ic=30 mA, Vce=0.4 V) |
The 2N2369A is an NPN silicon switching transistor manufactured by STMicroelectronics, qualified per MIL-PRF-19500/317. It features a collector-emitter voltage (Vceo) of 15V and a collector current (Ic) of 200mA.
With a transition frequency (ft) of 675 MHz, this transistor is suitable for high-speed switching applications. The DC current gain (hFE) ranges from 40 to 120 at 10mA, 1V, and the collector-emitter saturation voltage (Vce sat) is typically 0.5V at 10mA base current and 100mA collector current.
The device is housed in a TO-206AA / TO-18-3 metal can package with through-hole mounting. It has a power dissipation of 360mW and an operating junction temperature range of -65°C to 200°C. Thermal resistance junction-to-case is 146°C/W and junction-to-ambient is 325°C/W.
This transistor is designed for general-purpose switching and amplifier circuits, particularly where high speed and reliability are required. It is available in multiple reliability levels including JAN, JANTX, and JANTXV.
NPN.
15 V.
200 mA.
675 MHz.
-65°C to 200°C (junction).
TO-206AA / TO-18-3 metal can (through-hole).
RoHS3 compliant (unverified).