| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector-Base Cutoff Current | |
| Collector-Base Voltage | |
| Collector-Emitter Voltage (Base Short-Circuited) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Cutoff Current | |
| Emitter-Base Voltage | |
| I_CES (Maximum @ V_CE = 20 V) | |
| Input Capacitance | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance | |
| P_tot (Maximum @ T_A = 25 °C) | |
| P_tot (Maximum @ T_C = 25 °C) | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance, Ambient-to-Case | |
| Transistor Type | |
| Turn Off Time | |
| Turn On Time | |
| V_BE(sat) (Maximum @ I_C = 30 mA, I_B = 3.0 mA) | |
| V_BE(sat) (Minimum/Maximum @ I_C = 10 mA, I_B = 1.0 mA) | |
| V_BE(sat) (Minimum/Maximum @ I_C = 100 mA, I_B = 10 mA) | |
| V_CE(sat) (Maximum @ I_C = 10 mA, I_B = 1.0 mA) | |
| V_CE(sat) (Maximum @ I_C = 30 mA, I_B = 3.0 mA) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| h_FE (Minimum/Maximum @ I_C = 10 mA, V_CE = 0.35 V) | |
| h_FE (Minimum/Maximum @ I_C = 10 mA, V_CE = 1.0 V) | |
| h_FE (Minimum/Maximum @ I_C = 10 mA, V_CE = 10 V, f = 100 MHz) | |
| h_FE (Minimum/Maximum @ I_C = 30 mA, V_CE = 0.4 V) |
The 2N2369A is an NPN silicon switching transistor manufactured by Microchip Technology, qualified to MIL-PRF-19500/317. It is designed for high-speed switching applications and offers a maximum collector-emitter voltage (V_CEO) of 15V and collector-base voltage (V_CBO) of 40V. The transistor has a DC current gain (h_FE) ranging from 40 to 120 at I_C=10mA and V_CE=1.0V, with gain decreasing at higher collector currents.
Switching performance includes a maximum turn-on time of 12ns and turn-off time of 18ns at I_C=10mA, making it suitable for fast switching circuits. The collector-emitter saturation voltage is typically 0.2V at I_C=10mA and I_B=1.0mA. The device is offered in a through-hole TO-18 (TO-206AA) metal can package, with a maximum power dissipation of 0.5W at 25°C ambient temperature (derated linearly above +37.5°C) and 1.2W at case temperature of 25°C.
Thermal characteristics include a junction-to-case thermal resistance of 146°C/W and ambient-to-case resistance of 325°C/W. The operating junction temperature range is -65°C to +200°C. The 2N2369A is typically used in switching and pulse amplification circuits where high speed and reliability are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.98 | $3.98 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
15V.
Through-hole TO-18 (TO-206AA) metal can package.
-65°C to +200°C junction temperature.
40 to 120 at I_C=10mA, V_CE=1.0V; 30 to 120 at I_C=30mA, V_CE=0.4V.
Maximum turn-on time is 12ns and turn-off time is 18ns at I_C=10mA, I_B1=3.0mA, I_B2=1.5mA.
0.2V maximum at I_C=10mA, I_B=1.0mA.