Mfr Part #:

2N2369A

2N2369A is an NPN silicon switching transistor from Microchip Technology. It features a maximum collector-emitter voltage of 15V, DC current gain of 40-120, and power dissipation of 0.5W at 25°C ambient.

✓ Total Stock: 2,500 pcs

$ Price Range: $3.98

2N2369A Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Components Technology Group, Inc. ✓ Non-Authorised Inventory information	2,500 pcs On Request	2500 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

2N2369A Description

Short technical summary and product information.

The 2N2369A is an NPN silicon switching transistor manufactured by Microchip Technology, qualified to MIL-PRF-19500/317. It is designed for high-speed switching applications and offers a maximum collector-emitter voltage (V_CEO) of 15V and collector-base voltage (V_CBO) of 40V. The transistor has a DC current gain (h_FE) ranging from 40 to 120 at I_C=10mA and V_CE=1.0V, with gain decreasing at higher collector currents.

Switching performance includes a maximum turn-on time of 12ns and turn-off time of 18ns at I_C=10mA, making it suitable for fast switching circuits. The collector-emitter saturation voltage is typically 0.2V at I_C=10mA and I_B=1.0mA. The device is offered in a through-hole TO-18 (TO-206AA) metal can package, with a maximum power dissipation of 0.5W at 25°C ambient temperature (derated linearly above +37.5°C) and 1.2W at case temperature of 25°C.

Thermal characteristics include a junction-to-case thermal resistance of 146°C/W and ambient-to-case resistance of 325°C/W. The operating junction temperature range is -65°C to +200°C. The 2N2369A is typically used in switching and pulse amplification circuits where high speed and reliability are required.

2N2369A Quick Information

Product Type: Bipolar Junction Transistor (BJT)

Canonical Name: 2N2369A NPN Silicon Switching Transistor

Subcategory: Single BJT Transistor

2N2369A Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

2N2369A Estimated Pricing

Qty	Low	High
1+	$3.98	$3.98

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N2369A Features

NPN silicon switching transistor.
Maximum V_CEO of 15V.
DC current gain from 40 to 120.
Fast switching: 12ns turn-on, 18ns turn-off.
Through-hole TO-18 metal can package.

2N2369A Applications

High-speed switching circuits.
Pulse amplification applications.
Logic level conversion interfaces.

2N2369A FAQs

6 frequently asked questions generated from this part’s specifications.

What is the maximum collector-emitter voltage (V_CEO) of the 2N2369A?

15V.

What package type is the 2N2369A available in?

Through-hole TO-18 (TO-206AA) metal can package.

What is the operating temperature range?

-65°C to +200°C junction temperature.

What is the DC current gain (h_FE) of the 2N2369A?

40 to 120 at I_C=10mA, V_CE=1.0V; 30 to 120 at I_C=30mA, V_CE=0.4V.

What are the switching speeds of the 2N2369A?

Maximum turn-on time is 12ns and turn-off time is 18ns at I_C=10mA, I_B1=3.0mA, I_B2=1.5mA.

What is the collector-emitter saturation voltage?

0.2V maximum at I_C=10mA, I_B=1.0mA.

Category	Transistors - Bipolar (BJT) - Single
Manufacturer Name	Microchip Technology
Current	400 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	20 - 120
Input Capacitance	5.0 pF
Mounting Type	Through Hole
Operating Temperature	-65°C ~ 200°C
Power	360 mW
Supplier Device Package	TO-18 (TO-206AA)
Tape & Reel	No
Transistor Type	NPN
Turn Off Time	18 ns
Turn On Time	12 ns
Vce Saturation (Max) @ Ib, Ic	0.45 V
Voltage	15 V