| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,161 pcs
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3161 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
978 pcs
|
978 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The STMicroelectronics 2N2369 is a silicon planar epitaxial NPN transistor suitable for high-speed saturated switching applications. It is designed to operate with current levels ranging from 100 µA to 100 mA.
Key electrical specifications include a maximum Collector-Emitter Voltage (Vce) of 15V and a maximum Collector-Base Voltage (Vcb) of 40V. The maximum Collector Current (Ic) is rated at 400nA, with a Collector-Emitter Saturation Voltage (Vce(sat)) of 450mV. The Emitter-Base Voltage (Veb) is a maximum of 4.5V.
This transistor has a maximum power dissipation of 360mW. It is designed for a wide operating temperature range, from a minimum of -65°C to a maximum of 200°C.
The 2N2369 is packaged in a TO-18 metal case and features a through-hole mounting type. Its NPN polarity makes it suitable for various switching and amplification circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.27 | $0.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
15V
400nA
360mW
450mV
-65°C to 200°C
TO-18