| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N2369 is an NPN silicon planar epitaxial transistor designed for high-speed switching and RF amplification applications. It features a maximum collector-emitter voltage of 15V, continuous collector current of 200mA, and peak current handling up to 500mA. With a minimum transition frequency of 500 MHz and fast switching times (typ. 12 ns turn-on), it is well-suited for saturated switching circuits where low saturation voltage and short turn-off time are required.
Key electrical characteristics include a DC current gain (hFE) of at least 40 at 10mA collector current and a low collector-emitter saturation voltage of 250mV at 10mA. The device is rated for power dissipation of 360mW at 25°C case temperature and can operate over a junction temperature range of -65°C to +200°C.
The transistor comes in a TO-206AA / TO-18-3 metal can package and is designed for through-hole mounting. Its hermetic metal can construction provides robustness for industrial and military temperature range applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.93 | $3.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous collector current is 200 mA, with a peak rating of 500 mA for 10 µs pulses.
The operating and storage junction temperature range is -65°C to +200°C.
It is available in a TO-206AA / TO-18-3 metal can package for through-hole mounting.
The RoHS compliance status is unverified — it is listed as RoHS3 Compliant in the database but has not been confirmed by the manufacturer.