Mfr Part #:

2N2369

The 2N2369 is an NPN silicon high speed switching transistor from Microchip Technology. Key specs include 15V collector-emitter voltage, 200mA continuous collector current, and 500MHz minimum transition frequency.

✓ Total Stock: 3,500 pcs

$ Price Range: $3.93

2N2369 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Components Technology Group, Inc. ✓ Non-Authorised Inventory information	3,500 pcs On Request	3500 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

2N2369 Description

Short technical summary and product information.

The 2N2369 is an NPN silicon planar epitaxial transistor designed for high speed saturated switching applications. It features fast switching characteristics with short turn-off times and low saturation voltage.

Electrical characteristics include a maximum collector-emitter voltage of 15V, collector-base voltage of 40V, and emitter-base voltage of 4.5V. The continuous collector current rating is 200mA, with a peak current of 500mA. The DC current gain ranges from 40 to 120 at 10mA collector current and 1V collector-emitter voltage. The minimum transition frequency is 500MHz, making it suitable for RF and high-speed digital circuits.

The device is housed in a TO-18 metal can package (TO-206AA) with through-hole mounting. The operating junction temperature range is -65°C to 200°C. Power dissipation is rated at 360mW at case temperature 25°C, derating above that temperature.

2N2369 Quick Information

Product Type: High Speed Switching Transistor

Canonical Name: Microchip Technology 2N2369 NPN Silicon High Speed Switching Transistor

Subcategory: High Speed Switching Transistor

2N2369 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): MSL 1 Unlimited

REACH Status: REACH Unaffected

2N2369 Estimated Pricing

Qty	Low	High
1+	$3.93	$3.93

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N2369 Features

NPN silicon planar epitaxial construction.
High speed switching with 12ns turn-on time.
Low saturation voltage less than 0.25V.
TO-18 metal can through-hole package.
500MHz transition frequency for RF use.

2N2369 Applications

Ideal for high speed saturated switching circuits.
Used in RF amplifier and oscillator designs.
Suitable for digital logic interface applications.
Works in low power high speed switching.

2N2369 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the collector-emitter voltage rating of the 2N2369?

The maximum collector-emitter voltage (VCEO) is 15V.

What package does the 2N2369 come in?

The 2N2369 is available in a TO-18 metal can package (TO-206AA).

What is the operating temperature range of the 2N2369?

The junction operating temperature range is -65°C to 200°C.

Is the 2N2369 RoHS compliant?

The part is listed as RoHS3 compliant, but this status is unverified.

What is the transition frequency of the 2N2369?

The minimum transition frequency (ft) is 500MHz at VCE=10V, IC=10mA, f=100MHz.

What is the DC current gain (hFE) of the 2N2369?

The DC current gain ranges from 40 to 120 at IC=10mA, VCE=1V.

What is the maximum collector current?

The continuous collector current is 200mA, with a peak current of 500mA (10µs pulse).

Category	Transistors - Bipolar (BJT) - RF
Manufacturer Name	Microchip Technology
Current	200 mA
DC Current Gain (hFE) (Min) @ Ic, Vce	40 to 120
Lead Spacing	1.27 mm
Mounting Type	Through Hole
Operating Temperature	-65°C ~ 200°C (TJ)
Power	680 mW
Supplier Device Package	TO-18 (TO-206AA)
Transistor Type	NPN
Voltage	15 V