Mfr Part #:

2N2368

Mfr Name: SESCOCEM

The 2N2368 is an NPN transistor from SESCOCEM, designed for high-speed switching applications. It is supplied in a bare die format.

✓ Total Stock: 600 pcs

$ Price Range: $0.06

2N2368 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Partservice ✓ Non-Authorised Inventory information	600 pcs On Request	600 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

2N2368 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

SELECT ALL

Category	New Products
Manufacturer Name	SESCOCEM
Turn On Time	12 ns

View Similar Products (0)

2N2368 Description

Short technical summary and product information.

The 2N2368 is a high-speed NPN bipolar junction transistor (BJT) offered by SESCOCEM in a bare die configuration. This component is characterized for very high-speed saturated switching applications.

Key electrical specifications include a collector current capability of up to 200mA and a collector-emitter voltage of 15V. The transistor exhibits a typical current gain-bandwidth product (fT) of 400MHz at 10mA collector current and 10V collector-emitter voltage. Switching characteristics are notable, with a turn-on time of 12ns and a storage time of 10ns under specified test conditions.

The die dimensions measure 360 x 220 µm, with base and emitter pad sizes of 75 x 95 µm. The die thickness is 180 ±20 µm. The top metal layer is composed of Aluminum (Al) with a thickness of 1.3µm, while the back metal layer is Gold-Arsenic (AuAs) at 0.9µm. The component is designed for high reliability, featuring gold back metal and tested grades for military and space applications.

This bare die transistor is typically supplied in a waffle pack, with a standard package quantity of 400 units per tray. It is suitable for applications requiring compact size and high-speed switching performance where traditional packaged components may not be optimal.

2N2368 Quick Information

Product Type: NPN Transistor

Canonical Name: 2N2368 NPN Transistor Bare Die

Subcategory: Bare Die

2N2368 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

2N2368 Estimated Pricing

Qty	Low	High
1+	$0.06	$0.06

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N2368 Features

High-speed saturated switch transistor.
Collector current up to 200mA.
Bandwidth product of 400MHz.
Fast switching times.
Bare die format for custom integration.

2N2368 Applications

Ideal for high-speed switching circuits.
Suitable for military and space applications.
Used in custom hybrid microcircuits.
Applications requiring compact die size.

2N2368 FAQs

5 frequently asked questions generated from this part’s specifications.

What is the maximum collector current for the 2N2368 transistor?

The maximum collector current for the 2N2368 transistor is 200 mA.

What is the collector-emitter voltage rating of the 2N2368?

The collector-emitter voltage rating (VCEO) for the 2N2368 is 15 V.

What is the typical bandwidth product (fT) of the 2N2368 transistor?

The typical current gain-bandwidth product (fT) for the 2N2368 is 400 MHz.

What are the dimensions of the 2N2368 bare die?

The die dimensions for the 2N2368 are 360 x 220 µm, excluding the saw street.

How is the 2N2368 transistor supplied?

The 2N2368 transistor is supplied as a bare die in a waffle pack.