| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,917 pcs
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4917 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N2297 is an NPN bipolar transistor manufactured by NXP Semiconductors. It is designed for amplification and switching applications and comes in a TO-39 metal can package.
Key electrical specifications include a collector-emitter voltage (Vceo) of 35V and a collector-base voltage (Vcbo) of 80V. The maximum continuous collector current (Ic) is 40mA, with a saturation voltage (Vce(sat)) of 0.2V at 40mA collector current and 4mA base current. The DC current gain (hFE) is a minimum of 60 at 40mA collector current and 10V collector-emitter voltage, and typically 150 at 10mA collector current and 10V collector-emitter voltage. The transition frequency (fT) is a minimum of 150MHz.
This transistor is suitable for general-purpose amplification and switching circuits where its specific voltage and current ratings are beneficial. The TO-39 package is a common metal can package, typically requiring through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vceo) for the 2N2297 transistor is 35V.
The maximum continuous collector current (Ic) for the 2N2297 transistor is 40mA.
The DC current gain (hFE) of the 2N2297 transistor is a minimum of 60 at 40mA Ic and typically 150 at 10mA Ic.
The 2N2297 transistor is supplied in a TO-39 package.