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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4 pcs
|
4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N2222AUB is an NPN bipolar junction transistor manufactured by Microchip Technology. It is designed for general-purpose switching and amplification applications. Key electrical specifications include a collector-emitter voltage (Vceo) of 50V, a collector current (Ic) of 800mA, and a power dissipation of 500mW. The DC current gain (hFE) is minimum 100 at Ic=150mA and Vce=10V. The collector-emitter saturation voltage is maximum 1V at Ib=50mA and Ic=500mA. The transistor is housed in a surface mount 3-SMD, no lead package, with an operating junction temperature range of -65°C to 200°C. This component is suitable for use in various electronic circuits requiring moderate voltage and current handling in a compact surface mount form factor.
| Qty | Low | High |
|---|---|---|
| 1+ | $5.77 | $5.77 |
| 100+ | $5.36 | $5.36 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
50V.
3-SMD, No Lead surface mount package.
-65°C to 200°C (junction).
RoHS3 compliant (unverified).
800mA.
500mW.
Minimum 100 at Ic=150mA, Vce=10V.