| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,129 pcs
|
2129 pcs | On Request | 1 | On Request | On Request | 0834+ | On Request | On Request | |
|
33 pcs
|
33 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
20 pcs
|
20 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Cutoff Current (ICBO) | |
| Collector-Base Capacitance (Cobo) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Fall Time (tf) | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rise Time (tr) | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N2222A is a general-purpose NPN bipolar junction transistor manufactured by STMicroelectronics. It features a minimum collector-emitter breakdown voltage of 40V and a maximum collector current of 600mA, making it suitable for a wide range of switching and amplification applications.
With a minimum DC current gain (hFE) of 100 at 150mA and a typical transition frequency of 300 MHz, this transistor offers reliable performance in low-to-medium frequency circuits. The maximum collector-emitter saturation voltage is 1V at 50mA base current and 150mA collector current. Additional characteristics include a maximum collector-base capacitance of 8 pF, a rise time of 25 ns, and a fall time of 60 ns.
The device can dissipate up to 500 mW of power and operates with a maximum junction temperature of 175°C. The 2N2222A is housed in a TO-18 metal can package (TO-206AA / TO-18-3) designed for through-hole mounting.
Minimum 40V.
600 mA.
TO-18 metal can (TO-206AA / TO-18-3).
175°C.
Minimum 100 at Ic=150mA, Vce=10V.
300 MHz typical.
Indicated as RoHS3 compliant but unverified.