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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
98,620 pcs
|
98620 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
19 pcs
|
19 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Cutoff Current (ICBO) | |
| Collector-Base Capacitance (Cobo) | |
| Collector-Emitter Breakdown Voltage (V(BR)CEO) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Fall Time (tf) | |
| Mounting Type | |
| Operating Temperature Range (Toper) | |
| Power | |
| Rise Time (tr) | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Transition Frequency (fT) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N2222A is a general-purpose NPN bipolar junction transistor manufactured by On Semiconductor. It is designed for low-power switching and amplification applications.
Key electrical specifications include a maximum collector-emitter voltage of 40V, a maximum collector current of 800mA, and a minimum DC current gain (hFE) of 100 at 150mA and 10V. The transistor offers a transition frequency of 250MHz, making it suitable for RF and high-speed switching circuits. Collector-base capacitance is 8pF, and switching times are 25ns rise and 60ns fall.
The device is housed in a TO-18 metal can package (TO-206AA) with through-hole mounting. Maximum power dissipation is 500mW, and the operating junction temperature range extends to 175°C. The 2N2222A is a popular choice for general-purpose switching and linear amplification.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.90 | $2.90 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V.
800mA.
250 MHz.
TO-18 (TO-206AA, TO-18-3 Metal Can).
Maximum junction temperature 175°C.
RoHS3 Compliant (unverified).
Minimum 100 at 150mA, 10V.