| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,900 pcs
|
1900 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Operating Temperature Range | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N2222A is a general-purpose NPN silicon bipolar junction transistor designed for low-power switching and amplification applications. It is housed in a TO-18 (TO-206AA) metal can package with through-hole mounting.
Key electrical specifications include a minimum collector-emitter breakdown voltage of 40V, a maximum collector current of 800mA, and a typical transition frequency of 250MHz. The device offers a DC current gain (hFE) of at least 75 at 10mA collector current and 10V Vce, with a maximum Vce saturation voltage of 1V at 500mA collector current.
The transistor is rated for a maximum power dissipation of 500mW (datasheet) and can operate at junction temperatures up to 175°C. It features low collector-base capacitance (8pF) and fast switching times with 25ns rise and 60ns fall times.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.55 | $3.55 |
| 10+ | $3.34 | $3.34 |
| 100+ | $3.16 | $3.16 |
| 1,000+ | $2.98 | $2.98 |
| 10,000+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 2N2222A is available in a TO-206AA, TO-18-3 Metal Can package with through-hole mounting. The supplier device package is TO-18.
The operating junction temperature range is -65°C to 200°C.
The minimum collector-emitter breakdown voltage (V(BR)CEO) is 40V.
The maximum collector current (Ic) is 800mA.
The typical transition frequency (fT) is 250MHz.
The minimum DC current gain (hFE) is 75 at Ic=10mA and Vce=10V.
The datasheet specifies a maximum power dissipation of 500mW, while some distributor listings indicate 1.2W. Verify the applicable condition for your application.