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36 pcs
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36 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N2222 is a widely used NPN bipolar junction transistor (BJT) manufactured by NXP Semiconductors. It is designed for both analog signal amplification and digital switching applications. This transistor comes in a TO-18 metal can package, making it a cost-effective and compact solution for various electronic circuits.
Key electrical characteristics include a maximum Collector-Emitter Voltage (VCEO) of 40V and a maximum Collector Current (IC) of 0.8A. The DC Current Gain (hFE) is a minimum of 100 at Ic=150mA and Vce=10V. Its transition frequency (fT) is 300MHz, indicating suitability for moderate frequency applications.
The 2N2222 is mounted via through-hole technology. Its operating temperature ranges from -65°C to +150°C. The transistor's versatility and availability make it a popular choice for hobbyists and industrial applications alike.
Common applications include audio preamplifiers, audio amplifier stages, switching multiple loads, Darlington pairs, RF circuits, and sensor circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2N2222 is 40V.
The maximum DC collector current (IC) for the 2N2222 is 0.8A.
The minimum DC current gain (hFE) is 100 at Ic=150mA, Vce=10V.
The transition frequency (fT) is 300MHz.
The operating temperature range is from -65°C to +150°C.
The 2N2222 transistor is supplied in a TO-18 metal can package.
The 2N2222 transistor is mounted using through-hole technology.