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7 pcs
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7 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Thomson-CSF 2N2222 is an NPN bipolar junction transistor (BJT) designed for both linear amplification and switching applications. It is housed in a standard TO-18 metal package, making it suitable for through-hole mounting.
Key electrical characteristics include a maximum collector current of 800 mA and a maximum collector-emitter voltage of 30 V. The transistor exhibits a DC current gain (hFE) of at least 75 at 10 mA collector current and 10 V collector-emitter voltage. Its transition frequency (fT) is rated at a minimum of 250 MHz under specific test conditions.
Thermal considerations include a total power dissipation of up to 500 mW at 25 °C ambient temperature, with a junction-to-ambient thermal resistance of 350 K/W. The operating and storage temperature range is from -65 °C to 150 °C.
This transistor is a complementary part to the 2N2907A PNP transistor. Its robust design and specifications make it a versatile component for various electronic circuits.
| Qty | Low | High |
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| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-base voltage (VCBO) is 60V.
The 2N2222 is available in a TO-18 through-hole package.
The operating ambient temperature range is -65°C to 150°C, with a maximum junction temperature of 200°C.
The maximum continuous collector current is 800mA.
The DC current gain (hFE) is at least 75 at IC=10mA, VCE=10V, and ranges up to 300 at IC=150mA, VCE=10V.
The total power dissipation is 500mW at 25°C ambient temperature and 1.2W at 25°C case temperature.
The transition frequency (fT) is at least 250MHz at IC=20mA, VCE=20V.