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7 pcs
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7 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N2222 is a versatile NPN bipolar junction transistor (BJT) manufactured by Texas Instruments, designed for both linear amplification and switching applications. It is presented in a standard TO-18 metal package, suitable for through-hole mounting.
Key electrical characteristics include a maximum collector current of 800 mA and a maximum collector-emitter voltage (VCEO) of 40 V for the 2N2222A variant. The transistor exhibits a DC current gain (hFE) ranging from 35 to 300 depending on the operating conditions and specific part number (2N2222 or 2N2222A). Its transition frequency (fT) is rated at a minimum of 250 MHz for the 2N2222 and 300 MHz for the 2N2222A.
Thermal management is supported by a junction-to-ambient thermal resistance of 350 K/W and a junction-to-case thermal resistance of 146 K/W. The device can dissipate up to 500 mW at 25°C ambient temperature or 1.2 W when the case temperature is at 25°C. Operating and storage temperatures are within the range of -65°C to +150°C.
This transistor is a reliable choice for various electronic circuits requiring efficient switching or amplification at moderate power levels.
| Qty | Low | High |
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| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum DC collector current (IC) for the 2N2222 is 800 mA.
The maximum collector-emitter voltage (VCEO) for the 2N2222A is 40 V.
The typical DC current gain (hFE) for the 2N2222 at IC = 10 mA and VCE = 10 V is 75.
The minimum transition frequency (fT) for the 2N2222A at IC = 20 mA and VCE = 20 V is 300 MHz.
The 2N2222 transistor is supplied in a TO-18 metal package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is Level 1.